Physics – Condensed Matter – Materials Science
Scientific paper
2005-07-11
Solid State Communications 136 595 (2005)
Physics
Condensed Matter
Materials Science
9 pages, 7 figures
Scientific paper
10.1016/j.ssc.2005.09.037
We simulate the terahertz emission from laterally-biased InGaAs and InP using a three-dimensional carrier dynamics model in order to optimise the semiconductor material. Incident pump-pulse parameters of current Ti:Sapphire and Er:fibre lasers are chosen, and the simulation models the semiconductor's bandstructure using parabolic Gamma, L and X valleys, and heavy holes. The emitted terahertz radiation is propagated within the semiconductor and into free space using a model based on the Drude-Lorentz dielectric function. As the InGaAs alloy approaches InAs an increase in the emitted power is observed, and this is attributed to a greater electron mobility. Additionally, low-temperature grown and ion-implanted InGaAs are modelled using a finite carrier trapping time. At sub-picosecond trapping times the terahertz bandwidth is found to increase significantly at the cost of a reduced emission power.
Castro-Camus E.
Johnston M. B.
Lloyd-Hughes James
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