Compensation, interstitial defects and ferromagnetism in diluted semiconductors

Details Compensation, interstitial defects and ferromagnetism in diluted semiconductors Compensation, interstitial defects and ferromagnetism in diluted semiconductors

2006-06-20

arxiv.org/abs/cond-mat/0606525v1

Phys. Rev. B 72, 125207 (2005) (5 pages)

Physics

Condensed Matter

Disordered Systems and Neural Networks

Scientific paper

10.1103/PhysRevB.72.125207

We present a quantitative theory for ferromagnetism in diluted III-V ferromagnetic semi-conductors in the presence of the two types of defects commonly supposed to be responsible for compensation: As anti-sites and Mn interstitials. In each case we reduce the description to that of an effective random Heisenberg model with exchange integrals between active magnetic impurities provided by ab initio calculation. The effective magnetic Hamiltonian is then solved by a semi-analytical method (locally self-consistent RPA), where disorder is treated exactly. Measured Curie temperatures are shown to be inconsistent with the hypothesis that As anti-sites provide the dominant mechanism for compensation. In contrast, if we assume that Mn interstitials are the main source for compensation, we obtain a very good agreement between the calculated Curie temperature and the measured values, in both as-grown and annealed samples.

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