Graphene based spin field effect transistor

Details Graphene based spin field effect transistor Graphene based spin field effect transistor

2007-07-19

arxiv.org/abs/0707.2966v1

Physics

Condensed Matter

Materials Science

7 pages, 2 figures

Scientific paper

A spin field effect transistor (FET) is proposed by utilizing a graphene nanoribbon as the channel. Similar to the conventional spin FETs, the device involves ferromagnetic metals as a source and drain; they, in turn, are connected to the graphene channel. Due to the negligible spin-orbital coupling in the carbon based materials, the bias can accomplishes spin manipulation by means of electrical control of electron exchange interaction with a ferromagnetic dielectric attached to the nanoribbon between source and drain. The numerical estimations show the feasibility of graphene-based spin FET if a bias varies exchange interaction on the amount around 5 meV. It was shown that the device stability to the thermal dispersion can provide the armchair nanoribbons of specific width that keeps the Dirac point in electron dispersion law.

Affiliated with

Also associated with

No associations

Rating

Graphene based spin field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Graphene based spin field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Graphene based spin field effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-398230