Epitaxial growth and anisotropy of La(O,F)FeAs thin films deposited by Pulsed Laser Deposition

Details Epitaxial growth and anisotropy of La(O,F)FeAs thin films deposited by Pulsed Laser Deposition Epitaxial growth and anisotropy of La(O,F)FeAs thin films deposited by Pulsed Laser Deposition

2008-08-13

arxiv.org/abs/0808.1864v2

Supercond. Sci. Techn. 21 (2008) 122001

Physics

Condensed Matter

Superconductivity

11 pages, 5 figures

Scientific paper

10.1088/0953-2048/21/12/122001

LaFeAsO1-xFx thin films were deposited successfully on (001)-oriented LaAlO3 and MgO substrates from stoichiometric LaFeAsO1-xFx polycrystalline targets with fluorine concentrations up to x = 0.25 by PLD. Room temperature deposition and post annealing of the films yield nearly phase pure films with a pronounced c-axis texture and a strong biaxial in-plane orientation. Transport measurements show metallic resistance and onset of superconductivity at 11 K. Hc2(T) was determined by resistive measurements and yield Hc2 values of 3 T at 3.6 K for B||c and 6 T at 6.4 K for B||ab.

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