Electro-optic measurement of carrier mobility in an organic thin-film transistor

Details Electro-optic measurement of carrier mobility in an organic thin-film transistor Electro-optic measurement of carrier mobility in an organic thin-film transistor

2010-04-29

arxiv.org/abs/1004.5391v2

Physics

Condensed Matter

Materials Science

11 pages, 4 figures, to be published in Applied Physics Letters

Scientific paper

We have used an electro-optic technique to measure the position-dependent infrared absorption of holes injected into a thin crystal of the organic semiconductor, 6,13-bis(triisopropylsilylethynyl)-pentacene incorporated in a field-effect transistor. By applying square-wave voltages of variable frequency to the gate or drain, one can measure the time it takes for charges to accumulate on the surface, and therefore determine their mobility.

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