Microwave Nanotube Transistor Operation at High Bias

Details Microwave Nanotube Transistor Operation at High Bias Microwave Nanotube Transistor Operation at High Bias

2005-09-05

arxiv.org/abs/cond-mat/0509117v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 4 figures

Scientific paper

10.1063/1.2210447

We measure the small signal, 1 GHz source-drain dynamical conductance of a back-gated single-walled carbon nanotube field effect transistor at both low and high dc bias voltages. At all bias voltages, the intrinsic device dynamical conductance at 1 GHz is identical to the low frequency dynamical conductance, consistent with the prediction of a cutoff frequency much higher than 1 GHz. This work represents a significant step towards a full characterization of a nanotube transistor for RF and microwave amplifiers.

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