Large Magnetoresistance Ratio in Ferromagnetic Single-Electron Transistors in the Strong Tunneling Regime

Details Large Magnetoresistance Ratio in Ferromagnetic Single-Electron Transistors in the Strong Tunneling Regime Large Magnetoresistance Ratio in Ferromagnetic Single-Electron Transistors in the Strong Tunneling Regime

1999-08-04

arxiv.org/abs/cond-mat/9908061v2

PRL 83, 5138 (1999)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

updated version

Scientific paper

10.1103/PhysRevLett.83.5138

We study transport through a ferromagnetic single-electron transistor. The resistance is represented as a path integral, so that systems where the tunnel resistances are smaller than the quantum resistance can be investigated. Beyond the low order sequential tunneling and co-tunneling regimes, a large magnetoresistance ratio at sufficiently low temperatures is found. In the opposite limit, when the thermal energy is larger than the charging energy, the magnetoresistance ratio is only slightly enhanced.

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