Polarization fields in nitride nanostructures: ten points to think about

Details Polarization fields in nitride nanostructures: ten points to think about Polarization fields in nitride nanostructures: ten points to think about

1999-08-04

arxiv.org/abs/cond-mat/9908060v1

Physics

Condensed Matter

Materials Science

RevTeX 5 pages, 2 embedded figures

Scientific paper

10.1016/S0169-4332(00)00434-7

Macroscopic polarization, both of intrinsic and piezoelectric nature, is unusually strong in III-V nitrides, and the built in electric fields in the layers of nitride-based nanostructures, stemming from polarization changes at heterointerfaces, have a major impact on the properties of single and multiple quantum wells, high mobility transistors, and thin films. The concepts involved in the theory and applications of polarization in nitrides have encountered some resistance in the field. Here we discuss critically ten ``propositions'' aimed at clarifying the main controversial issues.

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