Transport gap in side-gated graphene constrictions

Details Transport gap in side-gated graphene constrictions Transport gap in side-gated graphene constrictions

2008-11-05

arxiv.org/abs/0811.0676v2

Phys. Rev. B 79, 075426 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevB.79.075426

We present measurements on side gated graphene constrictions of different geometries. We characterize the transport gap by its width in back gate voltage and compare this to an analysis based on Coulomb blockade measurements of localized states. We study the effect of an applied side gate voltage on the transport gap and show that high side gate voltages lift the suppression of the conductance. Finally we study the effect of an applied magnetic field and demonstrate the presence of edge states in the constriction.

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