Non-activated transport of strongly interacting two-dimensional holes in GaAs

Details Non-activated transport of strongly interacting two-dimensional holes in GaAs Non-activated transport of strongly interacting two-dimensional holes in GaAs

2006-03-02

arxiv.org/abs/cond-mat/0603053v3

Phys. Rev. B 74, 201302(R) (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures

Scientific paper

10.1103/PhysRevB.74.201302

We report on the transport measurements of two-dimensional holes in GaAs field effect transistors with record low densities down to 7*10^8 cm^{-2}. Remarkably, such a dilute system (with Fermi wavelength approaching 1 micrometer) exhibits a non-activated conductivity that grows with temperature following a power law. We contrast it with the activated transport obtained from measuring more disordered samples, and discuss possible transport mechanisms in this strongly-interacting regime.

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