The charge density of semiconductors in the GW approximation

Details The charge density of semiconductors in the GW approximation The charge density of semiconductors in the GW approximation

1998-01-05

arxiv.org/abs/cond-mat/9801021v1

Physics

Condensed Matter

5 pages (LaTeX) plus 2 Figures (PostScript)

Scientific paper

10.1103/PhysRevB.58.1343

We present a method to calculate the electronic charge density of periodic solids in the GW approximation, using the space-time method. We investigate for the examples of silicon and germanium to what extent the GW approximation is charge-conserving and how the charge density compares with experimental values. We find that the GW charge density is close to experiment and charge is practically conserved. We also discuss how using a Hartree potential consistent with the level of approximation affects the quasi-particle energies and find that the common simplification of using the LDA Hartree potential is a very well justified.

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