Transport and drag in undoped electron-hole bilayers

Details Transport and drag in undoped electron-hole bilayers Transport and drag in undoped electron-hole bilayers

2008-04-21

arxiv.org/abs/0804.3311v1

Phys. Rev. B 78, 075430 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages 3 figures

Scientific paper

10.1103/PhysRevB.78.075430

We investigate transport and Coulomb drag properties of semiconductor-based electron-hole bilayer systems. Our calculations are motivated by recent experiments in undoped electron-hole bilayer structures based on GaAs-AlGaAs gated double quantum well systems. Our results indicate that the background charged impurity scattering is the most dominant resistive scattering mechanism in the high-mobility bilyers. We also find that the drag transresistivity is significantly enhanced when the electron-hole layer separation is small due to the exchange induced renormalization of the single layer compressibility.

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