Performance Assessment of Sub-Percolating Nanobundle Network Transistors by an Analytical Model

Details Performance Assessment of Sub-Percolating Nanobundle Network Transistors by an Analytical Model Performance Assessment of Sub-Percolating Nanobundle Network Transistors by an Analytical Model

2006-03-07

arxiv.org/abs/cond-mat/0603180v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1109/TED.2007.891871

Nanobundle network transistors (NBTs) have emerged as a viable, higher performance alternative to poly-silicon and organic transistors with possible applications in macroelectronic displays, chemical/biological sensors, and photovoltaics. A simple analytical model for I-V characteristics of NBTs (below the percolation limit) is proposed and validated by numerical simulation and experimental data. The physics-based predictive model provides a simple relation between transistor characteristics and design parameters which can be used for optimization of NBTs. The model provides important insights into the recent experiments on NBT characteristics and electrical purification of nanobundle networks.

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