Strong mass effect on ion beam mixing in metal bilayers

Details Strong mass effect on ion beam mixing in metal bilayers Strong mass effect on ion beam mixing in metal bilayers

2004-05-18

arxiv.org/abs/cond-mat/0405407v2

Physics

Condensed Matter

Materials Science

4 pages, 4 figures, preprint

Scientific paper

10.1103/PhysRevB.71.113413

Molecular dynamics simulations have been used to study the mechanism of ion beam mixing in metal bilayers. We are able to explain the ion induced low-temperature phase stability and melting behavior of bilayers using only a simple ballistic picture up to 10 keV ion energies. The atomic mass ratio of the overlayer and the substrate constituents seems to be a key quantity in understanding atomic mixing. The critical bilayer mass ratio of $\delta < 0.33$ is required for the occurrence of a thermal spike (local melting) with a lifetime of $\tau > 0.3$ ps at low-energy ion irradiation (1 keV) due to a ballistic mechanism. The existing experimental data follow the same trend as the simulated values.

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