Magnetotransport with two occupied subbands in a Si(100) inversion layer

Details Magnetotransport with two occupied subbands in a Si(100) inversion layer Magnetotransport with two occupied subbands in a Si(100) inversion layer

1995-07-31

arxiv.org/abs/cond-mat/9507136v1

Physics

Condensed Matter

4 pages. RevTex text and 4 PostScript figures in a single tar-compressed file produced by 'uufiles'

Scientific paper

10.1016/0375-9601(95)00809-7

We have studied an electron transport in inversion layers of high-mobility Si(100) samples. At high electron concentrations and temperatures below 4.2 K, two series of Shubnikov-de Haas oscillations have been observed. The temperature damping of the second series oscillations indicates that the second occupied subband belongs to the first energy level of the fourfold-degenerate ladder $0'$. Samples with two occupied subbans exhibit a strong anomalous negative magnetoresitance, reaching $\rm \approx 25 \%$ of a zero field value at $B =$ 12 T. The resistance decrease is more pronounced for lower temperatures and higher electron concentrations. We explain this behaviour by an increase of the second subband mobility due to the freezing-out of the scattering of $0'$ electrons. Based on the measured periods of SdH oscillations, we conclude that the electrons are distributed inhomogeneously beneath the sample gate.

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