Parity Effect and Charge Binding Transition in Submicron Josephson Junction Arrays

Details Parity Effect and Charge Binding Transition in Submicron Josephson Junction Arrays Parity Effect and Charge Binding Transition in Submicron Josephson Junction Arrays

1997-03-18

arxiv.org/abs/cond-mat/9703174v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, Revtex, to be published in JETP Letters, April 97

Scientific paper

10.1134/1.567397

We reconsider the issue of Berezinskii-Kosterlitz-Thouless (BKT) transition into an insulating state in the Coulomb-dominated Josephson junction arrays. We show that previously predicted picture of the Cooper-pair BKT transtion at T = T_2 is valid only under the condition that T_2 is considerably below the parity-effect temperature (which is usually almost 10 times below the value of superconductive transition temperature), and even in this case it is not a rigorous phase transition but only a crossover, whereas the real phase transition takes place at T_1 = T_2/4. Our theory is in agreement with available experimental data on Coulomb-dominated Josephson arrays and also sheds some light on the origin of unusual reentrant temperature dependence of resistivity in the array with nearly-criticial ratio of Coulomb to Josephson energies.

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