Perspective of spintronics applications based on the Extraordinary Hall Effect

Details Perspective of spintronics applications based on the Extraordinary Hall Effect Perspective of spintronics applications based on the Extraordinary Hall Effect

2008-03-02

arxiv.org/abs/0803.0124v1

Physics

Condensed Matter

Strongly Correlated Electrons

Invited paper to be published in Journal of Nanoelectronics and Optoelectronics (JNO)

Scientific paper

Extraordinary Hall effect (EHE) is a spin-dependent phenomenon that generates voltage proportional to magnetization across a current carrying magnetic film. Magnitude of the effect can be artificially increased by stimulating properly selected spin-orbit scattering events. Already achieved sensitivity of the EHE-based sample devices exceeds 1000 Ohm/T, which surpasses the sensitivity of semiconducting Hall sensors. Linear field response, thermal stability, high frequency operation, sub-micron dimensions and, above all, simplicity, robustness and low cost manufacture are good reasons to consider a wide scale technological application of the phenomenon for magnetic sensors and memory devices.

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