Prospects of high temperature ferromagnetism in (Ga,Mn)As semiconductors

Details Prospects of high temperature ferromagnetism in (Ga,Mn)As semiconductors Prospects of high temperature ferromagnetism in (Ga,Mn)As semiconductors

2005-05-09

arxiv.org/abs/cond-mat/0505215v1

Phys. Rev. B 72, 165204 (2005)

Physics

Condensed Matter

Materials Science

13 pages, 12 figures, submitted to Phys. Rev. B

Scientific paper

10.1103/PhysRevB.72.165204

We report on a comprehensive combined experimental and theoretical study of Curie temperature trends in (Ga,Mn)As ferromagnetic semiconductors. Broad agreement between theoretical expectations and measured data allows us to conclude that T_c in high-quality metallic samples increases linearly with the number of uncompensated local moments on Mn_Ga acceptors, with no sign of saturation. Room temperature ferromagnetism is expected for a 10% concentration of these local moments. Our magnetotransport and magnetization data are consistnent with the picture in which Mn impurities incorporated during growth at interstitial Mn_I positions act as double-donors and compensate neighboring Mn_Ga local moments because of strong near-neighbor Mn_Ga-Mn_I antiferromagnetic coupling. These defects can be efficiently removed by post-growth annealing. Our analysis suggests that there is no fundamental obstacle to substitutional Mn_Ga doping in high-quality materials beyond our current maximum level of 6.2%, although this achievement will require further advances in growth condition control. Modest charge compensation does not limit the maximum Curie temperature possible in ferromagnetic semiconductors based on (Ga,Mn)As.

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