Multi-Band Mobility in Semiconducting Carbon Nanotubes

Details Multi-Band Mobility in Semiconducting Carbon Nanotubes Multi-Band Mobility in Semiconducting Carbon Nanotubes

2009-07-07

arxiv.org/abs/0907.1261v1

IEEE Electron Device Letters vol. 30, p. 1078 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

accepted in IEEE Electron Device Letters

Scientific paper

10.1109/LED.2009.2027615

We present new data and a compact mobility model for single-wall carbon nanotubes, with only two adjustable parameters, the elastic and inelastic collision mean free paths at 300 K. The mobility increases with diameter, decreases with temperature, and has a more complex dependence on charge density. The model and data suggest the room temperature mobility does not exceed 10,000 cm2/V.s at high carrier density (n > 0.5 nm-1) for typical single-wall nanotube diameters, due to the strong scattering effect of the second subband.

Affiliated with

Also associated with

No associations

Rating

Multi-Band Mobility in Semiconducting Carbon Nanotubes does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Multi-Band Mobility in Semiconducting Carbon Nanotubes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-Band Mobility in Semiconducting Carbon Nanotubes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-356491