Microscopic modelling of perpendicular electronic transport in doped multiple quantum wells

Details Microscopic modelling of perpendicular electronic transport in doped multiple quantum wells Microscopic modelling of perpendicular electronic transport in doped multiple quantum wells

1996-10-15

arxiv.org/abs/cond-mat/9610120v1

Physica Scripta, Vol. T69, pages 321-324 (1997)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages 5 figures

Scientific paper

We present a microscopic calculation of transport in strongly doped superlattices where domain formation is likely to occur. Our theoretical method is based on a current formula involving the spectral functions of the system, and thus allows, in principle, a systematic investigation of various interaction mechanisms. Taking into account impurity scattering and optical phonons we obtain a good quantitative agreement with existing experimental data from Helgesen and Finstad (J. Appl. Phys. 69, 2689, (1991)). Furthermore the calculated spectral functions indicate a significant increase of the average intersubband spacing compared to the bare level differences which might explain the experimental trend.

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