Impact of interface roughness on perpendicular transport and domain formation in superlattices

Physics – Condensed Matter – Mesoscale and Nanoscale Physics

Scientific paper

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4 pages 1 figure

Scientific paper

10.1006/spmi.1996.0249

A microscopic calculation of the perpendicular current in doped multiple
quantum wells is presented. Interface roughness is shown to affect the resonant
transitions as well as to cause a nonresonant background current. The
theoretical characteristics exhibit several branches due to the formation of
electric field domains in quantitative agreement with experimental data.

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