Physics – Condensed Matter – Materials Science
Scientific paper
2002-06-08
Physics
Condensed Matter
Materials Science
16 pages, 2 column REVTeX format, minor editorial changes, references to recent papers added, to appear in Euro. Phys. Journal
Scientific paper
10.1140/epjb/e2002-00316-5
Insertion of a resistive contact between a ferromagnetic metal and a semiconductor microstructure is of critical importance for achieving efficient spin injection into a semiconductor. However, the equations of the diffusion theory are rather cumbersome for the junctions including such contacts. A technique based on deriving a system of self-consistent equations for the coefficients of spin injection, "gamma", through different contacts are developed. These equations are concise when written in the proper notations. Moreover, the resistance of a two-contact junction can be expressed in terms of "gamma"'s of both contacts. This equation makes calculating the spin valve effect straightforward, allows to find an explicit expression for the junction resistance and to prove that its nonequilibrium part is positive. Relation of these parameters to different phenomena like spin-e.m.f. and the junction transients is established. Comparative effect of the Coulomb screening on different parameters is clarified. It is also shown that the spin non-conservation in a contact can have a dramatic effect on the non-equilibrium resistance of the junction.
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