Magnetoresistive junctions based on epitaxial graphene and hexagonal boron nitride

Details Magnetoresistive junctions based on epitaxial graphene and hexagonal boron nitride Magnetoresistive junctions based on epitaxial graphene and hexagonal boron nitride

2009-07-22

arxiv.org/abs/0907.3952v1

Phys. Rev. B 80, 035408 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages

Scientific paper

10.1103/PhysRevB.80.035408

We propose monolayer epitaxial graphene and hexagonal boron nitride (h-BN) as ultimate thickness covalent spacers for magnetoresistive junctions. Using a first-principles approach, we investigate the structural, magnetic and spin transport properties of such junctions based on structurally well defined interfaces with (111) fcc or (0001) hcp ferromagnetic transition metals. We find low resistance area products, strong exchange couplings across the interface, and magnetoresistance ratios exceeding 100% for certain chemical compositions. These properties can be fine tuned, making the proposed junctions attractive for nanoscale spintronics applications.

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