Non-equilibrium Plasmons in a Quantum Wire Single Electron Transistor

Details Non-equilibrium Plasmons in a Quantum Wire Single Electron Transistor Non-equilibrium Plasmons in a Quantum Wire Single Electron Transistor

2003-02-03

arxiv.org/abs/cond-mat/0302049v3

Phys. Rev. Lett. 90, 176401 (2003)

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 3 figures. To appear in the Phys. Rev. Lett

Scientific paper

10.1103/PhysRevLett.90.176401

We analyze a single electron transistor composed of two semi-infinite one dimensional quantum wires and a relatively short segment between them. We describe each wire section by a Luttinger model, and treat tunneling events in the sequential approximation when the system's dynamics can be described by a master equation. We show that the steady state occupation probabilities in the strongly interacting regime depend only on the energies of the states and follow a universal form that depends on the source-drain voltage and the interaction strength.

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