First-Principles Study on Leakage Current through Si/SiO$_2$ Interface

Details First-Principles Study on Leakage Current through Si/SiO$_2$ Interface First-Principles Study on Leakage Current through Si/SiO$_2$ Interface

2008-12-15

arxiv.org/abs/0812.2773v2

Physics

Condensed Matter

Materials Science

11 pages. to be published in Phys. Rev. B

Scientific paper

The relationship between the presence of defects at the stacking structure of the Si/SiO$_2$ interface and leakage current is theoretically studied by first-principles calculation. I found that the leakage current through the interface with dangling bonds is 530 times larger than that without any defects, which is expected to lead to dielectric breakdown. The direction of the dangling bonds is closely related to the performance of the oxide as an insulator. In addition, it is proved that the termination of the dangling bonds by hydrogen atoms is effective for reducing the leakage current.

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