Microwave Rectification at the Boundary between Two-Dimensional Electron Systems

Details Microwave Rectification at the Boundary between Two-Dimensional Electron Systems Microwave Rectification at the Boundary between Two-Dimensional Electron Systems

2001-10-17

arxiv.org/abs/cond-mat/0110331v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 6 figures

Scientific paper

Rectification of microwave radiation (20-40 GHz) by a line boundary between two two-dimensional metals on a silicon surface was observed and investigated at different temperatures, in-plane magnetic fields and microwave powers. The rectified voltage $V_{dc}$ is generated whenever the electron densities $n_{1,2}$ of the two metals are different, changing polarity at $n_1 \approx n_2$. Very strong nonlinear response is found when one of the two 2D metals is close to the electron density corresponding to the reported magnetic instability in this system.

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