Re-entrant Layer-by-Layer Etching of GaAs(001)

Details Re-entrant Layer-by-Layer Etching of GaAs(001) Re-entrant Layer-by-Layer Etching of GaAs(001)

1995-03-21

arxiv.org/abs/cond-mat/9503118v1

Physics

Condensed Matter

11 pages, REVTeX 3.0. Physical Review Letters, in press.

Scientific paper

10.1103/PhysRevLett.74.3289

We report the first observation of re-entrant layer-by-layer etching based on {\it in situ\/} reflection high-energy electron-diffraction measurements. With AsBr$_3$ used to etch GaAs(001), sustained specular-beam intensity oscillations are seen at high substrate temperatures, a decaying intensity with no oscillations at intermediate temperatures, but oscillations reappearing at still lower temperatures. Simulations of an atomistic model for the etching kinetics reproduce the temperature ranges of these three regimes and support an interpretation of the origin of this phenomenon as the site-selectivity of the etching process combined with activation barriers to interlayer adatom migration.

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