Observation of spin-selective tunneling in SiGe nanocrystals

Details Observation of spin-selective tunneling in SiGe nanocrystals Observation of spin-selective tunneling in SiGe nanocrystals

2011-07-20

arxiv.org/abs/1107.3919v1

Phys. Rev. Lett. 107, 246601 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 5 figures

Scientific paper

10.1103/PhysRevLett.107.246601

Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band.

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