Photon-induced switching and tunneling phenomna in a YBCO thin film junction

Details Photon-induced switching and tunneling phenomna in a YBCO thin film junction Photon-induced switching and tunneling phenomna in a YBCO thin film junction

2004-10-28

arxiv.org/abs/cond-mat/0410748v1

Central Eur.J.Phys. 3 (2005) 24-34

Physics

Condensed Matter

Materials Science

21 pages,5 figures, article accepted for publication in CEJP as of January 2005

Scientific paper

10.2478/BF02476503

In the persistent photoconductivity (PPC) phenomenon, illumination of a YBCO thin film junction with a 1mW He-Ne laser leads to the decrease of the critical critical voltage (similar to the threshold voltage). The decrease of the critical votage was reversed by illumination with incadenscent light. The critical voltage across the junction was experimentally decreased and increased by alternating illumination between He-Ne laser and incandescent light. We also observed visible quenching of the photo-induced state using a 5mW He-Ne laser. Finally, the threshold behavior of the junction was destroyed by illuminating it with incadenscent light.

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