Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces

Details Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces

2012-01-26

arxiv.org/abs/1201.5670v1

Physics

Condensed Matter

Materials Science

3 pages, 5 figures, to be published in Physica B. Corresponding author: C. Acha (acha@df.uba.ar)

Scientific paper

In order to determine the key parameters that control the resistive switching mechanism in metal-complex oxides interfaces, we have studied the electrical properties of metal / YBa2Cu3O7-d (YBCO) interfaces using metals with different oxidation energy and work function (Au, Pt, Ag) deposited by sputtering on the surface of a YBCO ceramic sample. By analyzing the IV characteristics of the contact interfaces and the temperature dependence of their resistance, we inferred that ion migration may generate or cancel conducting filaments, which modify the resistance near the interface, in accordance with the predictions of a recent model.

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