Terahertz Parametric Gain in Semiconductor Superlattices

Details Terahertz Parametric Gain in Semiconductor Superlattices Terahertz Parametric Gain in Semiconductor Superlattices

2007-06-20

arxiv.org/abs/0706.2967v1

Conference Digest of the 2007 Joint 32nd International Conference on Infrared and Millimeter Waves, and 15th International Con

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Submitted to Conference Digest of IRMMW-THz 2007 Cardiff, 2 pages, 3 figures

Scientific paper

We consider a high-frequency response of electrons in a single miniband of superlattice subject to dc and ac electric fields. Action of ac electric field causes oscillations of electron's effective mass in miniband, which result in a parametric resonance. We have established a theoretical feasibility of phase-sensitive parametric amplification at the resonance. The parametric amplification does not require operation in conditions of negative differential conductance. Therefore a formation of destructive domains of high electric field inside the superlattice can be prevented. Here we concentrate on the parametric up- and down-conversion of electromagnetic radiation from available frequencies to desirable THz frequency range.

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