Microwave-assisted transport via localized states in degenerately doped Si single electron transistors

Details Microwave-assisted transport via localized states in degenerately doped Si single electron transistors Microwave-assisted transport via localized states in degenerately doped Si single electron transistors

2010-03-09

arxiv.org/abs/1003.2340v3

JOURNAL OF APPLIED PHYSICS 108, 03450 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

9 pages, 5 figures

Scientific paper

10.1063/1.346796

Resonant microwave-assisted and DC transport are investigated in degenerately doped silicon single electron transistors. A model based on hopping via localized impurity states is developed and first used to explain both the DC temperature dependence and the AC response. In particular, the non-monotonic power dependence of the resonant current under irradiation is proved to be consistent with spatial Rabi oscillations between these localized states.

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