Observation of strong electron dephasing in disordered Cu$_{93}$Ge$_4$Au$_3$ thin films

Details Observation of strong electron dephasing in disordered Cu$_{93}$Ge$_4$Au$_3$ thin films Observation of strong electron dephasing in disordered Cu$_{93}$Ge$_4$Au$_3$ thin films

2007-06-20

arxiv.org/abs/0706.2913v1

Phys. Rev. Lett. 99, 046601 (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

to appear in Phys. Rev. Lett

Scientific paper

10.1103/PhysRevLett.99.046601

We report the observation of strong electron dephasing in a series of disordered Cu$_{93}$Ge$_4$Au$_3$ thin films. A very short electron dephasing time possessing very weak temperature dependence around 6 K, followed by an upturn with further decrease in temperature below 4 K, is found. The upturn is progressively more pronounced in more disordered samples. Moreover, a ln$T$ dependent, but high-magnetic-field-insensitive, resistance rise persisting from above 10 K down to 30 mK is observed in the films. These results suggest a nonmagnetic dephasing process which is stronger than any known mechanism and may originate from the coupling of conduction electrons to dynamic defects.

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