Spin-polarized light emitting diode using metal/insulator/semiconductor structures

Details Spin-polarized light emitting diode using metal/insulator/semiconductor structures Spin-polarized light emitting diode using metal/insulator/semiconductor structures

2002-02-22

arxiv.org/abs/cond-mat/0202389v1

Physics

Condensed Matter

Materials Science

4 pages including 3 figures

Scientific paper

10.1063/1.1496493

We have succeeded in growing ferromagnetic metals (Co, Fe, and NiFe)/ Al2O3/ AlGaAs heterostructures with homogeneous and flat interfaces. The electro-luminescence (EL) from the light emitting diode (LED) consisting of the metal/insulator/semiconductor (MIS) structure depends on the magnetization direction of the ferromagnetic electrode at room temperature. This fact shows that a spin-injection from the ferromagnetic metal to the semiconductor is achieved. The spin-injection efficiency is estimated to be the order of 1 % at room temperature.

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