Monte Carlo study of coaxially gated CNTFETs: capacitive effects and dynamic performance

Details Monte Carlo study of coaxially gated CNTFETs: capacitive effects and dynamic performance Monte Carlo study of coaxially gated CNTFETs: capacitive effects and dynamic performance

2007-09-19

arxiv.org/abs/0709.3051v3

Physics

Condensed Matter

Other Condensed Matter

15 pages, 14 figures, final version to be published in C. R. Acad. Sci. Paris

Scientific paper

10.1016/j.physe.2007.12.004

Carbon Nanotube (CNT) appears as a promising candidate to shrink field-effect transistors (FET) to the nanometer scale. Extensive experimental works have been performed recently to develop the appropriate technology and to explore DC characteristics of carbon nanotube field effect transistor (CNTFET). In this work, we present results of Monte Carlo simulation of a coaxially gated CNTFET including electron-phonon scattering. Our purpose is to present the intrinsic transport properties of such material through the evaluation of electron mean-free-path. To highlight the potential of high performance level of CNTFET, we then perform a study of DC characteristics and of the impact of capacitive effects. Finally, we compare the performance of CNTFET with that of Si nanowire MOSFET.

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