Full Counting Statistics for a Single-Electron Transistor, Non-equilibrium Effects at Intermediate Conductance

Details Full Counting Statistics for a Single-Electron Transistor, Non-equilibrium Effects at Intermediate Conductance Full Counting Statistics for a Single-Electron Transistor, Non-equilibrium Effects at Intermediate Conductance

2005-08-21

arxiv.org/abs/cond-mat/0508500v1

Phys. Rev. Lett. 96, 086803 (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 1 figure

Scientific paper

10.1103/PhysRevLett.96.086803

We evaluate the current distribution for a single-electron transistor with intermediate strength tunnel conductance. Using the Schwinger-Keldysh approach and the drone (Majorana) fermion representation we account for the renormalization of system parameters. Nonequilibrium effects induce a lifetime broadening of the charge-state levels, which suppress large current fluctuations.

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