Spin-polarized tunneling in ferromagnetic double barrier junctions

Details Spin-polarized tunneling in ferromagnetic double barrier junctions Spin-polarized tunneling in ferromagnetic double barrier junctions

2001-12-26

arxiv.org/abs/cond-mat/0112464v1

Eur. Phys. J. B 24 (2001) 149-153

Physics

Condensed Matter

Disordered Systems and Neural Networks

10 pages, LaTex, 4 PS figures

Scientific paper

10.1007/s100510170002

Spin-polarized tunneling in FMS/M/FMS double tunnel junctions where FMSs are ferromagnetic semiconductor layers and M is a metal spacer is studied theoretically within the single-site coherent potential approximation (CPA). The exchange interaction between a conduction electron and localized moment of the magnetic ion is treated in the framework of the s-f model. The spin polarization in the FMS layers is observed to oscillates as a function of the number of atomic planes in the spacer layer. Amplitude of these oscillations decreases with increasing the exchange interaction in FMS layers.

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