Non-equilibrium thermodynamic description of junctions in semiconductor devices

Details Non-equilibrium thermodynamic description of junctions in semiconductor devices Non-equilibrium thermodynamic description of junctions in semiconductor devices

1996-03-08

arxiv.org/abs/cond-mat/9603066v2

Physics

Condensed Matter

12 pages, RevTex. Submitted to Phys. Rev. B minor LaTex errors corrected

Scientific paper

The methods of non-equilibrium thermodynamics of systems with an interface have been applied to the study of transport processes in semiconductor junctions. A complete phenomenological model for drift-diffusion processes in a junction has been derived, which includes, from first principles, both surface equations and boundary conditions, together with the usual drift-diffusion equations for the bulks. In this way a self-consistent characterisation of the whole system, bulks and interface, has been obtained in a common framework. The completeness of the model has been shown and a simple application to metal-semiconductor junctions developed.

Affiliated with

Also associated with

No associations

Rating

Non-equilibrium thermodynamic description of junctions in semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Non-equilibrium thermodynamic description of junctions in semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-equilibrium thermodynamic description of junctions in semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-330546