Spin resonance of 2D electrons in a large-area silicon MOSFET

Details Spin resonance of 2D electrons in a large-area silicon MOSFET Spin resonance of 2D electrons in a large-area silicon MOSFET

2007-10-05

arxiv.org/abs/0710.1216v1

Physica E, Vol. 40, Issue 5, March 2008, Pages 1659-1661

Physics

Condensed Matter

Materials Science

7 pages, 3 figures, submitted to Physica E special edition for EPS2DS-17

Scientific paper

10.1016/j.physe.2007.10.030

We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2 interface. The signal and its intensity show a pronounced dependence on applied gate voltage. At gate voltages below the threshold of the MOSFET, the signal is from weakly confined, isolated electrons as evidenced by the Curie-like temperature dependence of its intensity. The situation above threshold appears more complicated. These large-area MOSFETs provide the capability to controllably tune from insulating to conducting regimes by adjusting the gate voltage while monitoring the state of the 2D electron spins spectroscopically.

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