Noise properties of the SET transistor in the co-tunneling regime

Details Noise properties of the SET transistor in the co-tunneling regime Noise properties of the SET transistor in the co-tunneling regime

2000-10-03

arxiv.org/abs/cond-mat/0010052v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

9 pages, 2 figures

Scientific paper

Zero-frequency spectral densities of current noise, charge noise, and their cross-correlation are calculated for the SET transistor in the co-tunneling regime. The current noise has a form expected for the uncorrelated co-tunneling events. Charge noise is created by the co-tunneling and also by the second-order transitions in a single junction. Calculated spectral densities determine transistor characteristics as quantum detector.

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