Superlattice properties of semiconductor nanohelices in a transverse electric field

Details Superlattice properties of semiconductor nanohelices in a transverse electric field Superlattice properties of semiconductor nanohelices in a transverse electric field

2008-09-23

arxiv.org/abs/0809.3903v1

Physica E 40, 1899 (2008)

Physics

Condensed Matter

Other Condensed Matter

6 pages, 1 fugure

Scientific paper

10.1016/j.physe.2007.08.054

A charge carrier confined in a quasi-one-dimensional semiconductor helical nanostructure in the presence of an electric field normal to the axis of the helix is subjected to a periodic potential proportional to the strength of the field and the helix radius. As a result, electronic properties of such nanohelices are similar to those of semiconductor superlattices with parameters controlled by the applied field. These properties include Bragg scattering of charge carriers by a periodic potential, which results in energy gap opening at the edge of the superlattice Brillouin zone. This provides an opportunity for creating a new class of tunable high-frequency devices based on semiconductor nanohelices.

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