Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures

Details Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures

2009-05-22

arxiv.org/abs/0905.3691v2

Phys. Rev. B 81, art. no. 045319 (2010)

Physics

Condensed Matter

Materials Science

Submitted tp Phys. Rev. B

Scientific paper

We describe a systematic study of the exchange coupling between a magnetically hard metallic ferromagnet (MnAs) and a magnetically soft ferromagnetic semiconductor (GaMnAs) in bilayer and trilayer heterostructures. An exchange spring model of MnAs/GaMnAs bilayers accounts for the variation of the exchange bias field with layer thickness and composition. We also present evidence for hole-mediated interlayer exchange coupling in MnAs/p-GaAs/\GaMnAs trilayers and study the dependence of the exchange bias field on the thickness of the spacer layer.

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