Evidence for multiple impurity bands in sodium-doped silicon MOSFETs

Details Evidence for multiple impurity bands in sodium-doped silicon MOSFETs Evidence for multiple impurity bands in sodium-doped silicon MOSFETs

2005-10-06

arxiv.org/abs/cond-mat/0510145v3

Phys. Rev. B 73, 4, 041304 (2006)

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages; 5 figures; Published in PRB Rapid-Communications

Scientific paper

10.1103/PhysRevB.73.041304

We report measurements of the temperature-dependent conductivity in a silicon metal-oxide-semiconductor field-effect transistor that contains sodium impurities in the oxide layer. We explain the variation of conductivity in terms of Coulomb interactions that are partially screened by the proximity of the metal gate. The study of the conductivity exponential prefactor and the localization length as a function of gate voltage have allowed us to determine the electronic density of states and has provided arguments for the presence of two distinct bands and a soft gap at low temperature.

Affiliated with

Also associated with

No associations

Rating

Evidence for multiple impurity bands in sodium-doped silicon MOSFETs does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Evidence for multiple impurity bands in sodium-doped silicon MOSFETs, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Evidence for multiple impurity bands in sodium-doped silicon MOSFETs will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-324609