Deposition of Cu2Ta4O12 by pulsed laser deposition

Details Deposition of Cu2Ta4O12 by pulsed laser deposition Deposition of Cu2Ta4O12 by pulsed laser deposition

2003-10-07

arxiv.org/abs/cond-mat/0310155v1

Physics

Condensed Matter

Materials Science

7 pages, 9 figures, submitted to Thin Solid Films

Scientific paper

Cu2Ta4O12 (CTaO) thin films were successfully deposited on Si(100) substrates by pulsed-laser deposition technique. The crystalline structure and the surface morphology of the CTaO thin films were strongly affected by substrate temperature, oxygen pressure and target - substrate distance. In general during deposition of CTaO the formation of a Ta2O5 phase appeared, on which CTaO grew with different orientations. We report on the experimental set-up, details for film deposition and the film properties determined by SEM, EDX and XRD.

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