Effect of Tilted Magnetic Field on the Anomalous H=0 Conducting Phase in High-Mobility Si MOSFETs

Details Effect of Tilted Magnetic Field on the Anomalous H=0 Conducting Phase in High-Mobility Si MOSFETs Effect of Tilted Magnetic Field on the Anomalous H=0 Conducting Phase in High-Mobility Si MOSFETs

1997-09-23

arxiv.org/abs/cond-mat/9709255v2

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, including 3 figures. We corrected several typos in the figures and captions

Scientific paper

10.1103/PhysRevB.58.3553

The suppression by a magnetic field of the anomalous H=0 conducting phase in high-mobility silicon MOSFETs is independent of the angle between the field and the plane of the 2D electron system. In the presence of a parallel field large enough to fully quench the anomalous conducting phase, the behavior is similar to that of disordered GaAs/AlGaAs heterostructures: the system is insulating in zero (perpendicular) field and exhibits reentrant insulator-quantum Hall effect-insulator transitions as a function of perpendicular field. The results demonstrate that the suppression of the low-T phase is related only to the electrons' spin.

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