Variable resistance at the boundary between semimetal and excitonic insulator

Details Variable resistance at the boundary between semimetal and excitonic insulator Variable resistance at the boundary between semimetal and excitonic insulator

2005-05-10

arxiv.org/abs/cond-mat/0505247v1

Solid State Communications 134, 89 (2005)

Physics

Condensed Matter

Strongly Correlated Electrons

Latex Elsevier Style, 14 pages, 3 postscript figures. Special Issue of Solid State Communications on Spontaneous Coherence in

Scientific paper

10.1016/j.ssc.2004.07.076

We solve the two-band model for the transport across a junction between a semimetal and an excitonic insulator. We analyze the current in terms of two competing terms associated with neutral excitons and charged carriers, respectively. We find a high value for the interface resistance, extremely sensitive to the junction transparency. We explore favorable systems for experimental confirmation.

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