Some Factors Leading to Asymmetry in Electronic Spectrum of Bilayer Graphene

Details Some Factors Leading to Asymmetry in Electronic Spectrum of Bilayer Graphene Some Factors Leading to Asymmetry in Electronic Spectrum of Bilayer Graphene

2009-07-24

arxiv.org/abs/0907.4337v1

Physics

Condensed Matter

Materials Science

8 pages, 4 figures

Scientific paper

We have investigated the effects of inplane and interplane nearest neighbour overlap integrals ($s_0$ and $s_1$) and site energy difference between atoms in two different sublattices in the same graphene layer ($\Delta$) on the electronic dispersion of bilayer graphene within tight binding model. Also, modifications in bilayer graphene bands due to inplane next nearest neighbour interactions ($\gamma_{1i}$, $s_{1i}$) and next to next nearest neighbour interactions ($\gamma_{2i}$, $s_{2i}$) have been studied. It is observed that $s_1$ introduces further asymmetry in energy positions of top conduction band and bottom valence band at the $K$ point on top of the asymmetry due to $\Delta$. Moreover, $s_0$, $s_1$ as well as the other inplane coupling parameters induce noticable electron-hole asymmetry in the slope of the bands and changes in band widths. The density of states of bilayer graphene has also been calculated within the same model.

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