Room temperature Giant Spin-dependent Photoconductivity in dilute nitride semiconductors

Details Room temperature Giant Spin-dependent Photoconductivity in dilute nitride semiconductors Room temperature Giant Spin-dependent Photoconductivity in dilute nitride semiconductors

2009-07-24

arxiv.org/abs/0907.4321v2

Appl. Phys. Lett. 95, 241104 (2009)

Physics

Condensed Matter

Other Condensed Matter

4 pages, 3 figures

Scientific paper

10.1063/1.3273393

By combining optical spin injection techniques with transport spectroscopy tools, we demonstrate a spin-photodetector allowing for the electrical measurement and active filtering of conduction band electron spin at room temperature in a non-magnetic GaAsN semiconductor structure. By switching the polarization of the incident light from linear to circular, we observe a Giant Spin-dependent Photoconductivity (GSP) reaching up to 40 % without the need of an external magnetic field. We show that the GSP is due to a very efficient spin filtering effect of conduction band electrons on Nitrogen-induced Ga self-interstitial deep paramagnetic centers.

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