Reflection symmetry at a B=0 metal-insulator transition in two dimensions

Physics – Condensed Matter – Mesoscale and Nanoscale Physics

Scientific paper

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The substance of the paper is unchanged but we have given a more appropriate credit to earlier work

Scientific paper

10.1103/PhysRevB.55.R13421

We report a remarkable symmetry between the resistivity and conductivity on
opposite sides of the B=0 metal-insulator transition in a two-dimensional
electron gas in high-mobility silicon MOSFET's. This symmetry implies that the
transport mechanisms on the two sides are related.

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