Imaging the lateral shift of a quantum-point contact using scanning-gate microscopy

Details Imaging the lateral shift of a quantum-point contact using scanning-gate microscopy Imaging the lateral shift of a quantum-point contact using scanning-gate microscopy

2011-09-07

arxiv.org/abs/1109.1544v1

Phys. Rev. B 84, 195322 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 3 figures

Scientific paper

10.1103/PhysRevB.84.195322

We perform scanning-gate microscopy on a quantum-point contact. It is defined in a high-mobility two-dimensional electron gas of an AlGaAs/GaAs heterostructure, giving rise to a weak disorder potential. The lever arm of the scanning tip is significantly smaller than that of the split gates defining the conducting channel of the quantum-point contact. We are able to observe that the conducting channel is shifted in real space when asymmetric gate voltages are applied. The observed shifts are consistent with transport data and numerical estimations.

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